MA/BA6 

Perfect Low-Cost Solution: 

?   High Accuracy 

?   Good Optical performance

?   latest processes (e.g. UV-NIL) 

Addressed Markets: 

?   MEMS 

?   Telecommunications

?   Compound Semiconductors

?   Nano Imprint Lithography 

Technical Data 

?   Wafer size:  up to 150 mm / 6′′ (round)

?   Min. pieces: 5 x 5mm

?   Mask size: SEMI spec, standard up to 7′′ x 7′′ (SEMI) 

Exposure Modes 

?   Contact: soft, hard, low vacuum, vacuum 

?   Proximity : exposure gap 1-300 μm

Optics 

?   UV250, UV300, UV400 and broadband optics

?   Intensity Uniformity ± 5% on 100mm

?   Constant power or constant intensity

?   Lamp sizes: 200W, 350W, 500W (for UV250)

?   Resolution down to 0,4 μm L/S (vacuum contact, UV250) 

Alignment

?   Top Side Alignment (TSA); Bottom Side Alignment (BSA); Infrared Alignment (IR) Vacuum 

?   TSA alignment accuracy: 0.5μm (with SUSS recommended wafer targets) 

?   BSA:down to 1μm

?   Alignment gap:1–1000μm